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Dry etching and wet etching in semiconductor etching film processes are suitable for different specific scenarios. 1. **Dry Etching**: - **Applications**: Typically used for high-resolution patterning, such as in the fabrication of integrated circuits (ICs) and microelectromechanical systems (MEMS). - **Advantages**: Provides better control over etching profiles, allows for anisotropic etching (vertical etching), and is suitable for etching complex geometries. - **Common Techniques**: Reactive Ion Etching (RIE), Deep Reactive Ion Etching (DRIE), and Plasma Etching. 2. **Wet Etching**: - **Applications**: Often used for bulk material removal, cleaning, and in processes where isotropic etching is acceptable, such as in the fabrication of certain types of sensors and optical devices. - **Advantages**: Generally simpler and less expensive than dry etching, and can be more effective for certain materials. - **Common Techniques**: Acid or alkaline solutions are used to etch materials like silicon, silicon dioxide, and metals. In summary, dry etching is preferred for applications requiring precision and complex patterns, while wet etching is suitable for simpler tasks and bulk material processing.

In the semiconductor manufacturing process, etching is a critical step used to form the desired patterns on silicon wafers. Etching methods are mainly divided into dry etching and wet etching, each with different application scenarios and advantages and disadvantages. The following will explore the specific application scenarios of these two etching methods in detail. Application of Dry Etching 1. Etching of Fine Patterns Dry etching utilizes plasma for etching, which has high directionality and precision, making it very suitable for etching patterns that require high accuracy and high aspect ratios. For example, in the manufacturing of nanoscale transistor gates and advanced CMOS devices, dry etching can provide extremely high etching precision, ensuring the performance of the devices. 2. Etching of Multi-layer Structures Due to the good directional control of dry etching, it is particularly suitable for etching multi-layer film structures. In the manufacturing of three-dimensional integrated circuits (3D IC) or stacked memory, dry etching can achieve precise vertical etching, thereby forming complex multi-layer structures. 3. Etching of Materials with High Selectivity Dry etching can achieve highly selective etching of different materials by adjusting the composition and parameters of the plasma. This is especially important for etching composite materials. For example, in etching...

Time 2025-01-08

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